Abstract

A novel AlGaAs BH laser which is designated as "Ridge Buried Heterostructure (RBH) Laser" has been successfully fabricated by a single-step MOCVD technology. The principle of the fabrication technology is based on an anisotropic crystal growth on the undercut ridge substrate. The narrow stripe active region and burying layer are formed successively by the single-step MOCVD. The RBH laser exhibits CW lasing characteristics with a threshold current as low as 30 mA and an external differential quantum efficiency of 35 % per facet at room temperature.

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