Abstract
A single-layer dual-polarized patch antenna loaded by T-shape microstrip stubs to achieve high port isolation is developed in this paper. This patch is side-fed in single-end form to simplify the connection to most RF chips. In addition, this patch only occupies single substrate layer with the ultra-low profile of 0.40λ0 × 0.40λ0 × 0.02λ0. High port isolation is realized by the loading effect of stubs. Simulated results show that this proposed antenna can cover 24GHz to 24.25GHz ISM band with peak realized gain of 5.2dBi and symmetrical broadside radiation pattern. Meanwhile the worst isolation between two orthogonally polarized ports is above 32dB considering PCB manufacturing tolerances.
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