Abstract
We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electron device or circuit. With various parameters one controls transient and stationary simulation modes. All node voltages, node charges and currents in any branch of the network can be output to files for later post-processing. The tunnelling of single electrons is simulated with a Monte Carlo technique where the change in free energy of the whole network determines tunnel rates of possible tunnel events.
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