Abstract
This paper reports the synthesis of the novel single-source precursor, [{(MeInAs t Bu)3}2(Me2InAs( t Bu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10-3 Ω cm) and carrier mobility (410 cm2 V-1 s-1) values despite growth on amorphous glass substrates.
Highlights
This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films
Characterisation of the reaction product revealed the formation of an InAs cluster, which was subsequently utilised in the deposition of InAs thin films via Aerosol-Assisted CVD (AACVD)
Hall effect measurements showed the films to be n-type semiconductors, carrier mobilities were lower than expected for InAs, which characteristically shows high electron mobility
Summary
This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 1C.
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