Abstract
A dc 6 GHz single-pole double-throw (SPDT) switching circuit that employs lateral metal-contact micromachined switches is investigated. The lateral metal-contact switch consists of a set of quasi-finite ground coplanar waveguide (FGCPW) transmission lines and a high-aspect-ratio cantilever beam. A single-pole single-throw (SPST) lateral micromachined switch has an insertion loss of 0.08 dB and a return loss of 32 dB at 5 GHz. The isolation is 32 dB at 5 GHz. The measured insertion loss of the SPDT switching circuit is below 0.75 dB, whereas the return loss is higher than 19 dB at 5 GHz. The isolation at 5 GHz is 33 dB. Pull-in voltage of the switch is 23.3 V and switching time is 35 μs. The size of the SPDT switching circuit is 1.2 mm × 1.5 mm. A main advantage of this circuit structure is simple fabrication process with high yield (>90%) based on the deep reactive ion etching (DRIE) technique of silicon-on-insulator (SOI) wafer and shadow mask technology.
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