A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection**Supported by the National Basic Research Program of China under Grant No 2012CB933501, and the National Natural Science Foundation of China under Grant Nos 61307033, 61274070, 61137003 and 61321063.

Abstract

A single mode hybrid III–V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry—Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3mW, and the threshold is 37mA at room temperature and continuous wave operation.