A single InGaN/GaN multiple quantum wells microwire light-emitting diode with high efficiency current injection and spreading

Abstract

Micro/nanowire light-emitting diodes have inspired considerable research interests due to their wide range of potential applications, such as in micro/nanoscale display, optical communication and optical logics. To realize a single wire light-emitting diode, however, it is usually faced with low-efficiency or wavelength uncontrollable. Herein, we report on an individual coaxial core/shell InGaN/GaN microwire light-emitting diode with tunable dual-/single-wavelength light emission, which can be feasibly realized by controlling growth rate of microwires using MOCVD. The unique cross-sectional morphologies of synthesized microwires can simplify the device fabrication process and are in favor of vertical current injection and spreading simultaneously. Thus, the microwire light-emitting diodes show advantages at the suppression of efficiency droop under large current injection, with a drop ratio of 19.6%, as increasing the injection current from 2.4 A cm−2 to 92.6 A cm−2. This study proposes a core/shell multiple quantum wells microwire structure to fabricate micro light-emitting diodes which may act as a reliable light source for micro/nanoscale integrated photonic systems.