Abstract
Indium doped tin oxide submicrometre sized wires have been synthesized by thermal evaporation and characterized by field emission (FE) microscopy. The non-linear Fowler–Nordheim plot corresponds to the typical semiconducting behaviour of the emitter. The field enhancement factor has been estimated to be 29 900 cm−1 indicating that electron emission is due to the nanometric features of the emitter. A current density of the order of 6.36 × 103 A cm−2 with an applied electric field of 1 × 104 V µm−1 has been obtained. The long term FE current stability tested at the preset current level of 1 µA exhibits no severe fluctuations.
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