Abstract
This letter proposes a single GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. The inductor uses four-path inductor with high Q-factor. With the supply voltage of V DD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is −124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.
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