Abstract
We present a simple method that enables both single electron transport through a self-assembled quantum dot and photon emission from the dot. The quantum dot buried in a semiconductor matrix is electrically connected with nanogap electrodes through tunneling junctions formed by a localized diffusion of the nanogap electrode metals. Coulomb blockade stability diagrams for the optically-active dot are clearly resolved at 4.2 K. The position of the quantum dot energy levels with respect to the contact Fermi level is controlled by the kind of metal atoms diffused from the nanogap electrodes.
Highlights
Semiconductor quantum dots (QDs) with nanogap electrodes which comprise metallic contact pairs with a nanometer scale separation have provided a good platform to observe many interesting single-electron related phenomena[1,2] such as tunneling magnetic resistance,[3] the Kondo effect at high temperatures,[4,5] the competition between the Kondo effect and superconductivity,[6] and electrically tuned spin-orbit interaction.[7]
The tunneling junctions are formed between the QD and the electrodes by the rapid thermal annealing of nanogap metal electrodes
The measurements show that the tunneling junctions are formed by the diffusion of metal electrodes which modify the electrostatic potential of the tunneling junctions and the QD
Summary
Semiconductor quantum dots (QDs) with nanogap electrodes which comprise metallic contact pairs with a nanometer scale separation have provided a good platform to observe many interesting single-electron related phenomena[1,2] such as tunneling magnetic resistance,[3] the Kondo effect at high temperatures,[4,5] the competition between the Kondo effect and superconductivity,[6] and electrically tuned spin-orbit interaction.[7]. The tunneling junctions are formed between the QD and the electrodes by the rapid thermal annealing of nanogap metal electrodes.
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