Abstract
The monolithic integration of electronic circuits in standard CMOS technology with high aspect ratio micromechanical structures based on single-crystal silicon is presented. For this technology neither silicon on insulator (SOI) wafers nor wet processes are required. A resonator device is chosen for technology demonstration. The effect of micromachining on parameters of CMOS transistors is detected and the usefulness of a final annealing step is confirmed. A novel electronic circuit design allows signal processing, even for low resonator signal levels and strong parasitic effects.
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