Abstract
In a CMOS image sensor pixel, fast and complete charge transfer from pinned photodiode (PPD) is desired and necessary in some applications. In special cases such as time-of-flight imaging or large pinned photodiodes, the PPD potential well shape greatly affects the charge transfer performance and should be engineered carefully. In the present work, a PPD structure named as multi-level PPD is introduced and examined through simulation study. Moreover, a fast and effective way to analyze the pinning process for a lag-free design is introduced. It is concluded that the proposed PPD achieves fast and complete charge transfer without employing additional lithography masks or process steps. The proposed PPD is compared with a similar conventional rectangular pixel and 31% reduction in the charge transfer time is observed.
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