Abstract
In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting temperature, coordination number, and cutting forces were revealed through MD simulations. SPDT experiment was also carried out to qualitatively validate MD simulation model from the aspects of normal cutting force. The simulation results show that the fundamental reason for ductile response of GaAs during SPDT is phase transition from a perfect zinc blende structure (GaAs-I) to a rock-salt structure (GaAs-II) under high pressure. Finally, a strong anisotropic machinability of GaAs was also found through MD simulations.
Highlights
The last few years have seen a wide exploitation of singlecrystal gallium arsenide (GaAs) in photoemitter devices [1], microwave devices [2], hall elements [3], solar cells [4], wireless communications [5], as well as quantum computation [6,7,8] due to its superior material properties such as higher temperature resistance, and higher electronic mobility and energy gap that outperforms silicon [9,10,11,12]
Ultraprecision multiplex 2D or 3D free-form nanostructures are often required on GaAs devices, such as radio frequency power amplifiers and switches used in 5G smart mobile wireless communications [13,14,15]
The visualization of simulation results was performed by using visual molecular dynamics (VMD) and open visualization tool (Ovito) software [39]
Summary
The last few years have seen a wide exploitation of singlecrystal gallium arsenide (GaAs) in photoemitter devices [1], microwave devices [2], hall elements [3], solar cells [4], wireless communications [5], as well as quantum computation [6,7,8] due to its superior material properties such as higher temperature resistance, and higher electronic mobility and energy gap that outperforms silicon [9,10,11,12]. Lapping [16, 17] and chemical–mechanical polishing [18,19,20,21] have been employed to successfully fabricate planar GaAs wafers They are not competent for the fabrication of 2D or 3D nanostructures. Focused ion beam (FIB) machining has been used to fabricate a hemispherical cavity with highly directional emission on a GaAs workpiece [22]. This approach is not viable for mass production for future commercialization due to the low material removal rate
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