Abstract
Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms of high and low conductance states was observed in the current-voltage characteristics recorded for the device at room temperature, and the on/off ratio for this single layered device was estimated to be as large as 103. The bistable electrical switching effects were attributed to the existence of the depletion layer at the ITO/PbPc and energetically exponential distribution in energy of traps in nonactive region of PbPc films.
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