Abstract
A simplified analytical theory is developed for the BARITT microwave diode. This is based on the small-signal concept of effective source conductivity and the large-signal concept of space-charge-limited injection. The impedance parameters of equivalent series resistance and capacitance and the output power and efficiency are evaluated as functions of frequency, r.f. load and biasing conditions. Small-signal negative-resistance Q-factors of about −20 are obtained at bias current densities in the range from about 50 Amps/cm 2 to about 200 Amps/cm 2. Large-signal power generation efficiencies of about 10% can be achieved with Q-factors of about −100.
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