Abstract
We present a simple and economical photoreflectance measurementmethodology that can easily be adapted to conventional scanning opticalmicroscopes. In this design, the laser source is sine-wave modulated so thatthe second-harmonic modulation distortion within the optical probe beam beforeand after reflection off the sample surface can be monitored. The desiredphotoreflectance measurement, which is taken as the change of reflectance as aresult of varying the incident optical power, is then obtained from the changein the ratio of the fundamental and second-harmonic signals. We demonstrateour set-up and technique by measuring the implantation damage innitrogen-implanted silicon samples.
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