Abstract
During the sputtering-deposition process, the temperature of film growth surface is more important than that of the substrate, which could seriously influence the film growth behavior. While, it is difficult to measure the temperature of film growth surface, because of the low space resolution of traditional temperature measurement systems. In this paper, the temperature of TiO2 film growth surface and substrate were monitored by the home-made NiCr/NiSi film thermocouple and standard NiCr/NiSi K type wire thermocouple. With the same sputtering parameters, the temperature of TiO2 film growth surface could reach [Formula: see text]C. While, the temperature of substrate was only about [Formula: see text]C. Finally, combining the temperature of film growth surface in sputtering-deposition process, the film growth behavior can be investigated and controlled in future.
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