Abstract
By using a simple theoretical approach, the previously reported experimental results of the polarization properties in semipolar and nonpolar InGaN quantum wells (QWs) were analyzed. On the basis of the k⋅p-perturbation theory, we derived a useful analytical expression for describing the polarization properties of these QWs, and used this expression to analyze experimental data reported from various research groups. Based on these analyses, we predicted that the negative polarization degree, which is favorable for laser diodes with cleaved-facet cavity mirrors, would appear in the blue- or green-InGaN QWs on the lower-angle semipolar planes (30°–40° inclined from the c-plane).
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