Abstract
AbstractA theoretical analysis of the Gilbert cell has been performed in order to accomplish a simple design method that allows us to choose the gate width and the bias point of its MESFET transistors as well as its load resistor RL; also, the frequency dependence on differential output voltage can be analyzed. A wideband (1‐4‐GHz) double side‐band (DSB) modulator has been designed and built using this method. This DSB modulator is comprised of an input differential amplifier, a Gilbert cell, and an output differential amplifier, and it has been implemented with the 0.5‐μm F20 process of GEC‐Marconi. A carrier rejection of 50 dB and a third‐order intermodulation rejection of 48 dB have been measured at 2 GHz. The dc power consumption of the Gilbert cell is 136 mW.
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