Abstract
A new sensor device is proposed for detection of power cycle degradation. Proposed sensor device is consisting of a Schottky-barrier MOSFET and the sensing principle is based on change of I-V characteristics by mechanical stress. Samples were fabricated by metal lift-off process and SiO2 gate insulator film deposition and the fundamental operation was evaluated by four-point bending test for mechanical stress applying. The fabricated device showed monotonically drain current change with number of stress cycles and about 5 times current change compared with initial current after 10,000 cycles of 4 N stress. Large current change by cyclic mechanical stress is attractive for a simple detection of power cycle degradation without expensive analog-circuits.
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