A simple process based on NH2- and CH3-terminated monolayers for low contact resistance and adherent Au electrode in bottom-contact OTFTs

Abstract

An efficient process for the low contact resistance and adherent source/drain Au electrode in bottom-contact organic thin film transistors (OTFTs) was developed. This was achieved by using two different surface-functional groups of self-assembled monolayers, 3-aminopropyltriethoxysilane (APS), and octadecyltrichlorosilane (OTS), combined with atmospheric-pressure (AP) plasma treatment. Prior to the deposition of Au electrode, the aminoterminated monolayer self-assembles on SiO2 dielectrics, enhancing the adhesion of Au electrode as a result of the acid-base interaction of Au with the amino-terminal groups. AP plasma treatment of the patterned Au electrode on the APS-coated surface activates the entire surface to form an OTS monolayer, allowing the formation of a high quality pentacene layer on both the electrode and active region by evaporation. In addition, negligible damage by AP plasma was observed for the device performance. The fabricated OTFTs based on the two monolayers by AP plasma treatment showed the mobility of 0.23 cm2/Vs, contact resistance of 29 kΩ-cm, threshold voltage of −1.63 V, and on/off ratio of 9.8 × 105, demonstrating the application of the simple process for robust and high-performance OTFTs.