Abstract
Single photon avalanche diode (SPAD) has the advantage of high internal gain, which is widely used in fluorescence detection and quantum communication. The high internal gain of the device is mainly due to avalanche multiplier effect. Therefore, it is of great significance to study avalanche multiplication effect for the design and performance optimization of SPAD devices. In this paper, a Simple Monte Carlo (SMC) model is implemented based on MATLAB, which includes interval phonon scattering and impact ionization of carriers. In this model, the electric field at different reverse bias voltages is extracted based on Technology-Computer- Aided- Design (TCAD). The model simulates the energy, velocity and impact ionization of carriers in the depletion region. The model has been verified on SPAD devices fabricated by 0.18um Bipolar - Complementary Metal Oxide Semiconductor - Diffused Metal Oxide Semiconductor (BCD) process. The SMC model simulates the dependence of the avalanche multiplication gain and excess noise factor of the SPAD device on the reverse bias voltage. In addition, the SMC model estimates the current–voltage (IV) characteristics and avalanche breakdown voltage of the device. In conclusion, the SMC model can provide guidance for the design and performance optimization of SPAD devices.
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