Abstract
A one-dimensional model of a buried channel CCD is presented. The potential equations, using the depletion region approximation are solved for a range of doping levels and stored charge. In this way values of device capacitance are calculated. It is shown that for a device with uniform layer and substrate dopings, the equations have an analytic solution. These solutions take a rather complicated form, but have a simple geometrical representation. A geometrical construction, based on field plots, is given. This construction may be used in the study of more general doping profiles.
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