Abstract
The contribution of nonradiative carrier recombinations to the characteristics of long-wavelength InGaAsP/InP semiconductor laser devices is verified by measuring the amplified spontaneous emission (ASE) power from a 1.5- mu m semiconductor laser amplifier (SLA) against the bias current. This method provides a simple and straightforward way to determine the mathematical form of recombination rate in a long-wavelength semiconductor laser, provided that the structural parameters of the laser are known.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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