Abstract
This article presents a simple method to create corner models to capture process variations for the lookup table-based MOSFET models through inputs and outputs mapping. The electrical specifications, including the threshold voltage, peak transconductance, ON-state resistance, saturation current, and gate oxide thickness, can be fitted through five model parameters. The effectiveness of the method is demonstrated by both the FinFET model BSIM-CMG and the planar MOSFET measurement data.
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