Abstract
A method for reducing the interface-state density in polysilicon gate metal-nitride-oxide-semiconductor (MNOS) capacitors is reported. The method involves deposition of a sacrificial blanket aluminum layer on top of a chemical-vapor-deposition (CVD) oxide over MNOS capacitors. The entire stack was then annealed at 450 °C in nitrogen and then the metal and CVD oxide were stripped away. The interface state density was reduced from 1011 to 1010 cm−2 eV−1 after this anneal. It is believed that Al reacts with trace water in the CVD oxide and generates active hydrogen. The hydrogen diffuses to the Si/SiO2 interface and passivates the interface states.
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