Abstract
By evaporating gallium from an aluminum-treated pBN crucible in a molecular beam epitaxy (MBE) system, ‘‘Ga spitting’’ and formation of Ga cell related oval defects have been eliminated. MBE GaAs layers as thick as 20 μm were totally free from the Ga cell related oval defects. Remaining defects were particulates or oval defects related to surface contamination and their densities were 100 and 500 cm−2 for 5 and 20-μm-thick layers of GaAs. The particulates-related oval defects were, however, hardly seen when 4-μm-thick GaAs was grown on Si substrates. Aluminum wets and reacts with the pBN crucible when heated to 1300 °C. Condensed gallium near the orifice wets the aluminum-treated surface. As a result, Ga droplets and related oval defects do not form. The method also avoids any gallium oxide in the Ga melt and provides a better outgassed pBN crucible. Contamination of the initial GaAs layers with Al was negligibly small with Al content x=0.0016 which reduced in subsequent layers. The results are presented for GaAs layers but the method should be equally applicable for evaporation of indium to prevent In-related oval defects in In-based compounds.
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