Abstract
A simple technique is reported herein, by which to extract accurately various capacitive coupling coefficients in floating-gate devices. With this technique the coupling coefficients are directly found from the slope of measured data, without the use of the transistor I- V model. Also the coupling coefficients are measured in device saturation, as occurs during the programming. Using a stacked gate flash cell as an example, the method is shown to yield accurate results. The values of coupling coefficients determined by the present method are compared with those found from the subthreshold slope method. From the comparison the observed 3D nature of capacitances inherent in these devices is discussed.
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