Abstract
There are several diffusion processes with different temperatures in modern semiconductor technology. The impurity distribution after these diffusion processes is analyzed and a simple expression for describing the distribution is given. It is found that the impurity distribution after multiple diffusion processes can be characterized with an effective diffusion length. The relation between this effective diffusion length and the diffusion lengths of each diffusion process is given and shows itself to be very simple and instructive. The results of the expression agree well with numerical simulations by using SUPREM IV. An example of the application of the expression is also shown.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
