Abstract
A planar twin polysilicon thin film transistor (TFT) EEPROM cell fabricated with a simple low temperature (/spl les/600/spl deg/C) process is demonstrated in this work. The gate electrodes of the two TFT's are connected to form the floating gate of the cell, while the source and drain of the larger TFT are connected to form the control gate. The cell is programmed and erased by Fowler-Nordheim tunneling. The threshold voltage of the cell can be shifted by as much as 8 V after programming. This new EEPROM cell can dramatically reduce the cost of production by reducing manufacturing complexity. >
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