Abstract

The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (VEe) for controlling diC/dt and gets feedback from the output voltage (vCE) in order to control dvCE/dt. The sampled voltage signals modify the profile of the applied gate voltage (vgg). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both dvCE/dt and diC/dt accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method.

Highlights

  • Insulated gate bipolar transistor (IGBT) power semiconductors with antiparallel freewheeling diodes (FWDs) are widely employed in industrial applications

  • It is well known that fast switching has a direct effect on the minimization of switching losses; it is the major reason for electromagnetic interference (EMI) generation in switched-mode power converters [1]

  • This will be more challenging when we are dealing with IGBTs, which operate at high frequency and are under hard switching conditions over non-constant load

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Summary

Introduction

Insulated gate bipolar transistor (IGBT) power semiconductors with antiparallel freewheeling diodes (FWDs) are widely employed in industrial applications. In order to create a safe operating point for an IGBT with respect to its nonlinearities and dependencies, it is necessary to get some feedback to related concerns and apply them to the GD controller For this reason, using passive and feedforward controllers with a simple structure and cheaper price is not an ideal solution for industrial applications. AGC can mainly be categorized into the closed-loop controller’s family These controllers have been presented and gradually developed to guarantee the safe operation area (SOA) of IGBTs under different load conditions. Using such controllers increases the cost and complexity of the GDs circuit. It covers all consequences of temperature variation without installing an additional circuit

Load Variation
IGBT’s Nonlinearity
Proposed Active Gate Control Method
Philosophy of the Method
The Closed-Loop GD Tuning and Experimental Results
The Comparison with CGD
Electromagnetic
Electromagnetic Interference Analysis
The Cost Study
Conclusions
Findings
Introduction to to Electromagnetic
Full Text
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