Abstract
A new, simple method to measure the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of an enhancement-mode MOSFET has been developed based on the analytical model of the subthreshold current. V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> is determined to be the gate voltage at which the I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> reaches the constant threshold current, and this method is accurate over a wide range of device dimensions, bias conditions, and operating temperatures.
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