Abstract
A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
