A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment

Abstract

MIM capacitors with ALD SiN as a dielectric are integrated in 0.18 um five-level Al-metrallization technology. Quadratic voltage coefficients of capacitance less than 60 ppm/V2 with capacitance density greater than 3 fF/um2 can be achieved using 400{degree sign}C deposition. TDDB lifetime of MIM capacitor with a capacitance of 4 nF is well above 10 years at 3.3 V.