Abstract
Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V.
Highlights
Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture
We are reporting a single-layer Schottky photovoltaic device that was fabricated by spincoating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension
The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions
Summary
Abstract Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spincoating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. Keywords Silicon nanocrystals Á Solar cell Á Schottky junction Á Thin film Introduction
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