Abstract
We report on the properties of the Si-InGaAs tandem photodetector for two-colour thermometric application. The radiant flux from the source is concentrated on the surface of the upper (silicon) photodiode. Photons of lower energy (wavelengths above 1 mu m) pass through and are absorbed in the InGaAs large-area photodiode. This device shows a very low nonlinearity (less than 5*10-4 in the current range 10-8-10-5 A). Because the working wavelengths of the two photodetectors are sufficiently separated, this tandem photodetector can be used for precise temperature measurements in the temperature range above 400 degrees C with high spatial resolution.
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