Abstract
AbstractA new gold‐related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized at a silicon atom and a gold atom, both forming a trigonal pair. The interaction with six groups of three equivalent silicon ligands is partly resolved. The g‐values are compared with those of other gold‐related defects in silicon. Models are discussed.
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