Abstract
ABSTRACTIn this paper we will discuss a new type of field effect transistor, a vacuum FET, where the usual channel material is the vacuum rather than a semiconductor. This new device is based on Field Emitter Arrays (FEA) which are inherently submicron structures. That is, the field emitters themselves must have dimensions less that 0.1 micrometers in order to generate the high electrostatic fields necessary for electron tunneling, and the control gate (or extraction electrode) must be very close to the field emitter tip in order to generate these high fields with reasonable voltages. Consequently, this new “FET” is the first of a new class of vaccum electronic switching devices based on microfabrication techniques, and susceptible to circuit integration.
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