Abstract
A room temperature silicon co-integrated light source module was realized by using a selective area metal bonding method, which is able to evanescently couple the light from InGaAsP multi-quantum well laser diodes into silicon waveguide. The module consists of a four-wavelength InGaAsP-Si hybrid laser array and a $4\times1$ silicon multimode interference (MMI) optical coupler on silicon-on-insulator platform. Its output wavelength can be accurately tuned around 1550 nm through controlling the width of the slotted silicon waveguides. The MMI specifically engineered for $C$ -band can be patterned and formed just by photolithography and inductively coupled plasma. The ease in fabrication makes this type of devices a promising candidate for wavelength division multiplex in future optical communication system.
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