A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range

Abstract

In this paper, we present the design and fabrication of a high-temperature silicon carbide CMOS intelligent gate driver circuit intended for high-power switching applications. Using a temperature-insensitive comparator, several functions including overvoltage and undervoltage, as well as short- and open-load detection, are provided, all of which are operational up to 300/spl deg/C. These integrated circuits are ideally suited for harsh and high-temperature environments such as automotive and aircraft jet engines.