Abstract
In this paper a new notch filter topology has firstly been described. In order to improve the input match as well as enhance the gain on the operating frequency of 20.5GHz, extra capacitor has firstly been added in the passive base-collector notch filter forming a new scheme, eliminating the operating-frequency (op) input mismatch in formal base-collector notch filters. EM simulations have shown that the LNA obtained 14.1dB gain at 20.5GHz and high image-rejection ratio (IRR) of 33.5dB at image frequency of 15GHz, and S11 of -15dB was obtained compared to −8dB without notch filter at operating frequency, NF was below 5dB at gain peak frequency, power consumption was 18mW at 3V voltage supply, and IIP3 was 3.43dBm ensuring a high linearity in SiGe bipolar process.
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