A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines

Abstract

This letter presents a D-band low noise amplifier (LNA) implemented in 90 nm SiGe BiCMOS technology and is intended for next-generation communications systems. The LNA is a five-stage staggered common-emitter and cascode design used to simultaneously achieve wide bandwidth and high gain. The LNA utilizes asymmetric broadside coupled lines as interstage impedance transformers to achieve a wideband gain response while constraining power consumption. The presented LNA achieves an in-band gain of 26.5 dB and a bandwidth of 37.6 GHz. The minimum measured NF is 7.2 dB, and the dc power consumption is 20.6 mW. This D-band LNA achieves high gain, wide bandwidth, and low power consumption, resulting in a competitive performance with other D-band LNAs in the literature. The die area of the fabricated LNA is 0.8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 0.86 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula> , including pads.