A SiGe BiCMOS Concurrent K/V Dual-Band 16-Way Power Divider and Combiner

Abstract

A new dual-band 16-way power divider and combiner on a 0.18- ${\mu }\text{m}$ SiGe BiCMOS process that works concurrently over 18–26 GHz (K-band) and 57–64 GHz (V-band) is presented. The 16-way K/V dual-band power divider integrates a two-way K/V dual-band Wilkinson-based power divider with a high-pass filter and multiple broad-band two-way lumped-element and transmission-line Wilkinson power dividers. The two-way dual-band power divider is designed by employing a slow-wave transmission line and two shunt-connected series LC resonators in each arm, leading to miniaturization and low loss with dual-band transmission in K- and V-band, decent return losses, and good isolation of larger than 20 dB over the dual-band. The developed 16-way K/V dual-band power divider possesses good performance over the dual-band. Specifically, it achieves measured insertion losses of 18.4 and 21 dB at 24 and 60 GHz, respectively, with good return losses. Furthermore, it also exhibits measured isolation larger than 20.1 and 17.7 dB between any two output ports at 24 and 60 GHz, respectively.