Abstract
Through a Monte Carlo approach, we have studied the a-Si growth by sputtering. We have studied the effect of the energetic--silicon-atom and --argon-ion bombardment on the structure of the resulting films. We found two competing processes in the film growth, depending on the ${\mathrm{Ar}}^{+}$ energy and Ar-Si current ratio. We also found that the coalescence of the a-Si structure cannot be attributed to silicon bombardment. On the other hand, energetic--argon-ion bombardment may be responsible for such coalescence.
Published Version
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