Abstract
Hydrogenated amorphous silicon (a-Si:H) films were deposited in a standard diode-type radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) reactor. Larger deposition rates were achieved by replacing the powered electrode plate by a cup-shaped electrode, whose area was larger than that of the grounded substrate holder by a factor of 5. As a result the substrate holder became the cathode and the deposition rate increased by a factor of 10 to ∼3 nm s−1. The best properties of cathode samples were obtained at substrate temperatures near 350°C, as opposed to typically 250°C for anode samples. Our results indicate that the ion bombardment occurring on the cathode improves the growth of a-Si:H films at the higher deposition rates observed. Nevertheless, in the as-deposited state, the defect density ND and the ambipolar diffusion length LD of the cathode samples are inferior compared to anode films. After intense light soaking, however, the properties of anode and cathode samples agree within experimental accuracy.
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