Abstract
A Si-based vertical nanowire heterostructure array photodetector is designed and studied by a coupled three-dimensional optoelectronic simulation. Each nanowire is composed of an InP/In0.53Ga0.47As/InP axial p-i-n junction, which is designed to operate at telecommunication wavelengths. The results show that the absorption of the nanowire array strongly depends on the D/P ratio and nanowire diameter. By tuning the D/P ratio and diameter simultaneously, the peak absorption wavelength could be fixed at 1550 nm. Due to the light-trapping and light-concentrating properties, the nanowire array photodetector exhibits a remarkable responsivity beyond 0.8 A/W, several times higher than its thin film counterpart with the equivalent thickness. This work suggests that the III–V nanowire array is promising for high-performance Si-based photodetectors applied in optical telecommunication systems.
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