Abstract
ZnIn2S4, a typical n-type semiconductor, has received intensive attention due to its suitable bandgap, excellent visible light absorption performance, and simple and flexible preparation methods. However, its application is curbed by photo-generated carrier recombination and photo corrosion. Although constructing S-scheme heterojunctions by combining ZnIn2S4 with other semiconductors can solve these problems, the photocatalytic activity of S-scheme heterojunctions can be further improved. Therefore, this short review summarizes modification strategies of ZnIn2S4-based S-scheme heterojunctions. This article also introduces the concept, design principles, and characterization methods of ZnIn2S4-based S-scheme heterojunction. Finally, current challenges and future research focuses related to ZnIn2S4-based S-scheme heterojunctions are discussed and summarized, including the utilization of advanced in-situ characterization techniques to further illuminate the photocatalytic mechanism, the DFT-assisted design of catalysts to increase the selectivity of products during photocatalytic CO2 reduction, and extending the photo-response of ZnIn2S4-based S-scheme heterojunction to near-infrared range, etc.
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