Abstract
We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under 5 μm) thin-film transistor (TFT) was successfully fabricated using a selfaligned damage preventing layer. The linear field effect mobility of the 4-μm channel length TFT was 10.4 cm 2 /V · s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.
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