Abstract

The SiC JFET is an attractive semiconductor device due to its superior switching performance and high-temperature operating capability. Its shoot-through protection remains a challenge due to the limited practical knowledge existent on this device and due to its inherent normally on nature. Addressing this limitation, this paper presents a novel shoot-through protection scheme in which a bidirectional switch, compounded by a Si insulated-gate bipolar transistor (IGBT) and a relay,is embedded into the dc-link midpoint in order to detect and clear shoot-through faults, taking advantage of the well-known desaturation protection schemes of IGBTs to protect SiC JFETs. This paper describes in detail the proposed protection mechanism and its circuit design, presenting as well the experimental results that verified the effectiveness of the proposed scheme using, first, Si MOSFETs and second, a 10-kW ac–ac converter system using SiC JFETs.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.