Abstract
The reaction of Si atoms with HCl was studied behind reflected shock waves at temperatures between 1500 and 2850 K and pressures around 1.4 bar. Atomic resonance absorption spectroscopy (ARAS) was applied for time-resolved measurement of Si and Cl atoms. Si atoms were produced by the thermal decomposition of SiH4 and Si2H6, respectively. HCl being present in excess causes a rapid consumption of Si atoms, which follows a pseudo-first-order rate law. The reaction channel and the rate coefficient for the reaction of Si atoms with HCl was determined to be:
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